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Two-Peak Temperature Dependence of the Microwave Surface Impedance in Single-Crystalline YBCO Films

机译:微波表面阻抗的双峰温度依赖性   单晶YBCO薄膜

摘要

Temperature dependencies of microwave surface impedance were measured forperfect c-oriented YBCO thin films deposited on CeO2-buffered sapphiresubstrates. The measurements revealed a distinct two-peak structure of Rs(T)and Xs(T) dependencies with peaks at 28-30 K and 50 K. The peaks become smearedat higher frequencies as well as in applied dc magnetic field about 1 kOe,while the peak positions remain almost unchanged. For less perfect, e.g., PLDfilms, Rs(T) and Xs(T) dependencies are monotonous (power law). The two-peakZs(T)dependencies for YBCO films differ from those for high quality YBCO singlecrystals, where only one much broader frequency-dependent peak of Rs(T) wasdetected earlier. The two-peak Zs(T) behavior is believed to be an intrinsicelectron property of extremely perfect quasi-single-crystalline YBCO films. Atheoretical model is suggested to explain the observed anomalous Zs(T)behavior. The model is based on the Boltzman kinetic equation forquasiparticles in layered HTS cuprates. It takes into account the supposeds+d-wave symmetry of electron pairing and strong energy dependent relaxationtime of quasiparticles, determined mainly by their elastic scattering onextended defects parallel to the c-axis (e.g., c-oriented dislocations and twinboundaries).
机译:测量了沉积在CeO2缓冲蓝宝石衬底上的完美c取向YBCO薄膜的微波表面阻抗的温度依赖性。测量结果揭示了Rs(T)和Xs(T)相关性的独特的两峰结构,其峰值分别在28-30 K和50 K时出现。这些峰值在较高频率下以及在施加约1 kOe的直流磁场时变得模糊不清。峰值位置几乎保持不变。对于不太完美的情况,例如PLDfilms,Rs(T)和Xs(T)依赖关系是单调的(幂定律)。 YBCO膜的两个峰值Zs(T)依赖性不同于高质量YBCO单晶的两个峰值,其中较早发现Rs(T)的一个更宽的频率依赖性峰。人们认为,两个峰值的Zs(T)行为是极其完美的准单晶YBCO薄膜的固有电子性质。建议使用理论模型来解释观察到的Zs(T)异常行为。该模型基于层状HTS铜酸盐中准粒子的Boltzman动力学方程。它考虑了电子配对的假定+ d波对称性和准粒子的强能量依赖弛豫时间,主要由它们在平行于c轴的扩展缺陷(例如c取向的位错和双边界)上的弹性散射决定。

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